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TO-220F 12A Triac
TM1241S-R, TM1261S-R
s Features
qRepetitive peak off-state voltage: VDRM=400, 600V qRMS on-state current: IT(RMS)=12A qGate trigger current: IGT=8mA max (MODE , , qFor resistive load qUL approved type available
External Dimensions
(Unit: mm)
3.30.2 16.90.3 8.40.2 4.00.2 10.00.2
4.20.2 C 0.5 2.8
3.90.2 0.80.2
)
qIsolation voltage: VISO=1500V(50Hz Sine wave, RMS)
13.0 min
a b
1.350.15 1.350.15 +0.2 0.85 -0.1 +0.2 0.45 -0.1 2.40.2
a. Part Number b. Lot Number
2.54 2.20.2
2.54
(1). Terminal 1 (T1) (2). Terminal 2 (T2) (3). Gate (G)
(1) (2) (3)
Weight: Approx. 2.1g
sAbsolute Maximum Ratings
Parameter
Repetitive peak off-state voltage RMS on-state current Surge on-state current Peak gate voltage Peak gate current Peak gate power loss Average gate power loss Junction temperature Storage temperature Isolation voltage
Symbol
VDRM IT(RMS) ITSM VGM IGM PGM PG(AV) Tj Tstg VISO
Ratings
TM1241S-R 400 12 110 -- 2 5 0.5 - 40 to +125 - 40 to +125 1500 TM1261S-R 600
Unit
V A A V A W W C C Vrms
Conditions
Conduction angle 360, Tc=84C 50Hz full-cycle sinewave, Peak value, Non-repetitive, Tj=125C
50Hz Sine wave, RMS, Terminal to Case, 1 min.
sElectrical Characteristics
Parameter
Off-state current On-state voltage
(Tj=25C, unless otherwise specified)
Symbol
IDRM VTM
Ratings
min typ max 2.0 0.1 1.6 1.1 1.8 1.2 1.2 8 8 8 0.6 0.7 2.1 5 4.5 5 25 0.1 6 3.0
Unit
mA V
Conditions
VD=VDRM, RGK=, Tj=125C VD=VDRM, RGK=, Tj=25C Pulse test, ITM=16A T2 , G
+ + - - + -
Gate trigger voltage
VGT
V
VD=6V, RL=10, TC=25C
T2 , G T2 , G T2 , G
+ + - -
- + + -
T2 , G mA VD=6V, RL=10, TC=25C T2 , G T2 , G T2 , G V mA C/W VD=1/2xVDRM, Tj=125C VD=6V Junction to case
Gate trigger current
IGT
- +
Gate non-trigger voltage Holding current Thermal resistance
VGD IH Rth
58
TM1241S-R, TM1261S-R
vT - iT Characteristics (max)
100 50
ITSM Ratings
120
Gate Characteristics
Tj= -20C Tj= -40C 30
Surge on-state current ITSM (A)
iT (A)
10
Tj=125C
80 60
vGF (V)
10 ms 1cycle
1 0 0
8
Tj=25C 10
100
Initial junction temperature Tj=125C ITSM
Gate trigger voltage VGT (V)
12
3 2
10
On-state current
20
W =5 P GM
Gate voltage
5
Tj=25C
Gate trigger current IGT (mA)
6
1 0.5
40
4 2 0 0 1 2 3
See graph at the upper right
20 0
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
1
5
10
50
100
On-state voltage
vT ( V )
Number of cycle
Gate current
iGF (A)
IT(RMS) - PT(AV) Characteristics
18
IT(RMS) - Tc Ratings
150
Full-cycle sinewave Conduction angle :360
IT(RMS) - Ta Ratings
150
Full-cycle sinewave Conduction angle : 360 Self-supporting Natural cooling No wind
IH temperature Characteristics
(Typical)
50 (RGK=)
Average on-state power PT(AV) (W)
16 14 12 10 8 6 4 2 0
Full-cycle sinewave Conduction angle :360
Ambient temperature Ta (C)
125
125 100
Case temperature TC (C)
100
Holding current IH (mA)
10 5
75
75 50 25 0
50 25 0
1 0.5 -40
0
2
4
6
8
10
12
14
0
2
4
6
8
10
12
14
0
0.5
1.0
1.5
2.0
2.5
3.0
0
25
50
75
100
125
RMS on-state current IT(RMS) (A)
RMS on-state current IT(RMS) (A)
RMS on-state current IT(RMS) (A)
Junction temperature Tj (C)
Pulse trigger temperature Characteristics
(MODE - )
vgt (Typical)
(MODE - ) (MODE - )
)
)
trigger VGT DC gateat 25C voltage
trigger VGT DC gateat 25C voltage
(
(
)
VGT
vgt ( Gate trigger voltage) at Ta and tw
vgt ( Gate trigger voltage) at Ta and tw
Gate trigger voltage at Ta and tw
(
1.5
vgt Ta= - 40C -20C tw 0C 25C 50C 75C 100C 125C
1.5
Ta= - 40C vgt -20C tw 0C 25C 50C 75C 100C 125C
)
2.0
2.0
2.0
Ta= - 40C vgt -20C tw 0C 25C 50C 75C 100C 125C
DC gate trigger voltage at 25C
1.5
1.0
1.0
1.0
vgt (
0.5 0.5 1
10
100
1000
0.5 0.5 1
10
100
1000
0.5 0.5 1
10
100
1000
Pulse width
tw (s)
Pulse width
tw (s)
Pulse width
tw (s)
Pulse trigger temperature Characteristics
(MODE - )
30
DC gate trigger current at 25C
igt (Typical)
(MODE - )
30
trigger IGT DC gateat 25C current
(MODE - )
30
trigger IGT DC gateat 25C current
igt
10 5
igt (Gate trigger current ) at Ta and tw
igt (Gate trigger current ) at Ta and tw
Gate trigger current at Ta and tw
tw Ta= - 40C -20C 0C 25C 50C 75C 100C 125C
10 5
)
IGT
Ta= - 40C -20C tw 0C 25C 50C 75C 100C 125C
igt
10 5
Ta= - 40C igt -20C tw 0C 25C 50C 75C 100C 125C
)
)
(
(
(
)
1 0.5 0.2 0.5 1
1 0.5
1 0.5
igt (
0.2 0.5 1
10
100
1000
0.2 0.5 1
10
100
1000
10
100
1000
Pulse width
tw (s)
Pulse width
tw (s)
Pulse width
tw (s)
VGT temperature characteristics
(Typical)
1.8 1.6
(VD=20V, RL=40)
IGT temperature characteristics
(Typical)
50
(VD=20V, RL=40)
Transient thermal resistance Characteristics
100
rth (C/W)
Gate trigger voltage VGT (V)
1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -40 0
MO DE
Gate trigger current IGT (mA)
Junction to operating environment
10
10
MOD
MOD E
Transient thermal resistance
( T2 + ,G + )
MODE MODE MODE
(T2-, G- ) (T2+, G+ ) (T2+, G- )
E
(T2-,G -
(T2+,G - )
)
5
Junction to case
1
0.1 0.05 0.1 1 10 10 2 10 3 10 4 10 5
25
50
75
100
125
1 -40
0
25
50
75
100
125
Junction temperature Tj (C)
Junction temperature Tj (C)
t, Time (ms)
59

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